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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
SILICON POWER MOS FET
NE5500234
4.8
V N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
Document No. PU10405EJ02V0DS (2nd edition)
Date Published August 2007 NS
DESCRIPTION
The NE5500234
is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for DCS1800 and PCS1900
handsets. Die
are manufactured using our NEWMOS technology (our 0.6 ?m WSi gate
lateral MOS FET), housed in a surface mount
3-pin power Minimold (34 PKG)
(SOT-89 type) package. The device
can deliver 32.5 dBm output power with 50% power added efficiency at 1.9
GHz with
4.8
V supply voltage.
FEATURES
?
High output power
: Pout
= 32.5 dBm TYP. (VDS
= 4.8
V, IDset
= 400 mA, f = 1.9
GHz, Pin
= 25
dBm)
?
High power added efficiency
: ?add
= 50% TYP. (VDS
= 4.8
V, IDset
= 400 mA, f = 1.9 GHz, Pin
= 25
dBm)
?
High linear gain
: GL
= 11
dB TYP. (VDS
= 4.8 V, IDset
= 400 mA, f = 1.9 GHz)
?
Surface mount package
: 3-pin power Minimold (34 PKG)
(SOT-89 type)
?
Single supply
: VDS
= 3.0
to 6.0
V
APPLICATIONS
?
Digital cellular phones
: DCS1800/PCS1900 handsets
?
Handheld transceiver
: FRS (Family Radio Service), GMRS (General Mobile Radio Service)
?
Others
: General purpose amplifiers for various
applications
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5500234
NE5500234-AZ
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free
: External
solder plating)
V2
? Magazine case
? Qty 25 pcs/case
NE5500234-T1
NE5500234-T1-AZ
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free
: External
solder plating)
? 12 mm wide embossed taping
? Source pin face the perforation side of the tape
? Qty 1 kpcs/reel
Remarks1.
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500234-AZ
2.
This
product is containing Pb-material inside.
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